DocumentCode
796175
Title
Measurement of a damaged layer thickness with reflection acoustic microscope
Author
Ishikawa, Isao ; Kanda, Hiroshi ; Katakura, Kageyoshi ; Semba, Takuya
Author_Institution
Hitachi Constr. Machinery Co. Ltd., Tokyo, Japan
Volume
36
Issue
6
fYear
1989
Firstpage
587
Lastpage
592
Abstract
An acoustic microscope was used for determining the frequency dependence of surface acoustic wave (SAW) velocity on a specimen whose silicon single-crystal surface was machined under various conditions. Consequently, thickness of the damaged layers could be estimated from the curvature points of frequency dispersion curves of the SAW velocity. It was revealed that thicknesses of the damaged layers can be estimated through rough approximation by about one-half the wavelength determined by the frequency at curvature points. From specimens possessing two damaged layers, frequency dispersion curves with two curvature lines can be obtained. From the curvature point at high frequencies the thickness of the top damaged layer can be determined. On the other hand, from the curvature point at low frequencies, the thickness of the inner damaged layer can also be determined. By choosing an acoustic lens as the condition for exciting SAWs, images can be observed while varying the frequency. From observation results obtained with this method, the distribution in the depth direction can be clarified.<>
Keywords
acoustic microscopy; elemental semiconductors; silicon; surface acoustic waves; thickness measurement; ultrasonic velocity measurement; SAW velocity; Si; acoustic lens; curvature points; damaged layer thickness; depth direction; frequency dispersion curves; inner damaged layer; reflection acoustic microscope; thickness; top damaged layer; Acoustic measurements; Acoustic reflection; Acoustic waves; Frequency dependence; Frequency estimation; Microscopy; Rough surfaces; Silicon; Surface acoustic waves; Thickness measurement;
fLanguage
English
Journal_Title
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher
ieee
ISSN
0885-3010
Type
jour
DOI
10.1109/58.39108
Filename
39108
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