Title :
Ultra-thin benzocyclobutene bonding of III-V dies onto SOI substrate
Author :
Roelkens, G. ; Thourhout, D. Van ; Baets, R.
Author_Institution :
Dept. of Inf. Technol., Univ. of Ghent, Belgium
fDate :
4/28/2005 12:00:00 AM
Abstract :
The bonding of InP/InGaAsP heterostructures dies onto an SOI substrate is reported. Bonding layer thicknesses down to 200 nm were reproducibly achieved. Bonding was achieved both on unprocessed SOI substrates as on processed SOI substrates containing high index contrast waveguides.
Keywords :
III-V semiconductors; bonding processes; gallium arsenide; indium compounds; integrated optoelectronics; microassembling; organic compounds; silicon-on-insulator; III-V dies; InP-InGaAsP; InP-InGaAsP heterostructure dies; SOI substrate; bonding layer thickness; contrast waveguides; die bonding; ultra-thin benzocyclobutene bonding;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20050807
