Guided-wave THz time-domain spectroscopy of highly doped silicon using parallel-plate waveguides

Author

Mendis, R.

Author_Institution

Fac. of Eng., Univ. of Wollongong, NSW, Australia

Volume

42

Issue

1

fYear

2006

Abstract

A novel spectroscopy technique that uses parallel-plate waveguides for the characterisation of highly conductive materials in the terahertz (THz) frequency regime is presented. This guided-wave technique resolves some of the fundamental problems associated with standard THz time-domain spectroscopy (THz-TDS) as applied to these optically dense materials. The technique is demonstrated by measuring the conductivity of highly phosphorus doped silicon

Keywords

electrical conductivity measurement <highly doped Si, parallel-plate waveguides, guided-wave THz time-domain spectrosc.>; elemental semiconductors <highly doped Si, parallel-plate waveguides, guided-wave THz time-domain spectrosc.>; parallel plate waveguides <highly doped Si, parallel-plate waveguides, guided-wave THz time-domain spectrosc.>; phosphorus <highly doped Si, parallel-plate waveguides, guided-wave THz time-domain spectrosc.>; silicon <highly doped Si, parallel-plate waveguides, guided-wave THz time-domain spectrosc.>; submillimetre wave measurement <highly doped Si, parallel-plate waveguides, guided-wave THz time-domain spectrosc.>; submillimetre wave spectroscopy <highly doped Si, parallel-plate waveguides, guided-wave THz time-domain spectrosc.>; time-domain analysis <highly doped Si, parallel-plate waveguides, guided-wave THz time-domain spectrosc.>; Si:P; THz time-domain spectroscopy; conductivity measurement; guided-wave technique; highly conductive material; highly doped silicon; highly phosphorus doped silicon; optically dense material; parallel-plate waveguide; terahertz frequency;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20063418

Filename

1577596