Title :
HBT matrix amplifier with gain-cell enhancing gain and bandwidth
Author :
Chatchaikarn, A. ; Chen, Y.C. ; Yang, D. ; Gao, H. ; Li, G.P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Irvine, CA, USA
Abstract :
A 2 μm InGaP/GaAs heterojunction bipolar transistor (HBT) matrix amplifier with a new gain cell achieving 17.2 dB gain and 41 GHz bandwidth is reported. Using the gain-bandwidth products per transistor ft and fmax as the figures of merit for measuring the effectiveness of amplifier design, it achieves 4.72 and 4.43, respectively, demonstrating among the best-reported bipolar broadband amplifiers
Keywords :
III-V semiconductors <HBT matrix amp., gain-cell enhancing gain and bandwidth>; MMIC amplifiers <HBT matrix amp., gain-cell enhancing gain and bandwidth>; bipolar MMIC <HBT matrix amp., gain-cell enhancing gain and bandwidth>; bipolar transistor circuits <HBT matrix amp., gain-cell enhancing gain and bandwidth>; gallium arsenide <HBT matrix amp., gain-cell enhancing gain and bandwidth>; gallium compounds <HBT matrix amp., gain-cell enhancing gain and bandwidth>; heterojunction bipolar transistors <HBT matrix amp., gain-cell enhancing gain and bandwidth>; indium compounds <HBT matrix amp., gain-cell enhancing gain and bandwidth>; wideband amplifiers <HBT matrix amp., gain-cell enhancing gain and bandwidth>; 17.2 dB; 2 micron; 41 GHz; HBT matrix amplifier; InGaP-GaAs; bipolar broadband amplifiers; gain-bandwidth products; gain-cell; heterojunction bipolar transistor matrix amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20063223
