Title :
I-V characteristics by radial tunneling in double-barrier tunneling diodes with cylindrical barriers
Author_Institution :
Dept. of Electr. Eng. & Comput. Eng., Iowa State Univ., Ames, IA, USA
fDate :
7/1/1995 12:00:00 AM
Abstract :
Radial tunneling transport in a double-barrier tunneling diode (DBTD) with cylindrical barriers has been theoretically studied. Calculations use a generalization of the transfer matrix method. Fine oscillation is demonstrated in transmission spectra and I-V characteristics. It is attributed to the coherence of traveling waves associated with cylindrical geometry. Various AlxGa1-x As-GaAs DBTD´s with cylindrical barriers have been examined at absolute zero and room temperatures. Results are compared with DBTD´s with planar geometry. It is recognized that different bias direction induces asymmetric I-V characteristics. Devices that operate on this inborn asymmetry are proposed. The device characteristics could be less sensitive to temperature than that of planar structures due to the fundamental operation principle. The results are useful to understand charge transport by the fast tunneling in quantum-well and superlattice structures with different geometries
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; gallium arsenide; matrix algebra; semiconductor quantum wells; semiconductor superlattices; tunnel diodes; AlxGa1-xAs-GaAs DBTD´s; AlGaAs-GaAs; I-V characteristics; absolute zero; asymmetric I-V characteristics; bias direction; charge transport; cylindrical barriers; double-barrier tunneling diodes; fast tunneling; fine oscillation; fundamental operation principle; planar geometry; quantum-well structures; radial tunneling; radial tunneling transport; room temperatures; superlattice structures; transfer matrix method; transmission spectra; traveling waves; Coherence; Fabrication; Geometry; Molecular beam epitaxial growth; Phonons; Semiconductor diodes; Semiconductor superlattices; Temperature sensors; Transmission line matrix methods; Tunneling;
Journal_Title :
Quantum Electronics, IEEE Journal of
