Title :
Low-power InP/GaAsSb/InP DHBT cascode transimpedance amplifier with GBP/Pdc of 7.2 GHz/mW
Author :
Wang, J. ; Zhu, X. ; Pavlidis, D.
Abstract :
A low-power high gain-bandwidth monolithic cascode transimpedance amplifier using novel InP/GaAsSb/InP DHBT technology was investigated. The amplifier exhibited state-of-the-art performance of 17.3 dB gain, 12 GHz bandwidth, 55 dBΩ transimpedance, and a corresponding gain-bandwidth of 6.7 THzΩ while consuming only 12.2 mW DC power. It also achieved good gain-bandwidth-product per DC power figure-of-merit (GBP/Pdc) of 7.2 GHz/mW
Keywords :
III-V semiconductors <low-power InP/GaAsSb/InP DHBT cascode transimpedance amp., GBP/Pdc of 7.2 GHz/mW>; MMIC amplifiers <low-power InP/GaAsSb/InP DHBT cascode transimpedance amp., GBP/Pdc of 7.2 GHz/mW>; bipolar MIMIC <low-power InP/GaAsSb/InP DHBT cascode transimpedance amp., GBP/Pdc of 7.2 GHz/mW>; gallium arsenide <low-power InP/GaAsSb/InP DHBT cascode transimpedance amp., GBP/Pdc of 7.2 GHz/mW>; heterojunction bipolar transistors <low-power InP/GaAsSb/InP DHBT cascode transimpedance amp., GBP/Pdc of 7.2 GHz/mW>; indium compounds <low-power InP/GaAsSb/InP DHBT cascode transimpedance amp., GBP/Pdc of 7.2 GHz/mW>; low-power electronics <InP/GaAsSb/InP DHBT cascode transimpedance amp., GBP/Pdc of 7.2 GHz/mW>; 12 GHz; 12.2 mW; 17.3 dB; InP-GaAsSb-InP; double heterojunction bipolar transistor; gain-bandwidth-product per DC power figure-of-merit; low power DHBT; monolithic cascode transimpedance amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20062800
