• DocumentCode
    796247
  • Title

    Charge Amplification without Charge Leak Resistor

  • Author

    Radeka, V.

  • Author_Institution
    Brookhaven National Laboratory Upton, New York
  • Volume
    17
  • Issue
    3
  • fYear
    1970
  • fDate
    6/1/1970 12:00:00 AM
  • Firstpage
    433
  • Lastpage
    439
  • Abstract
    Charge amplification without the conventional charge leak resistor is considered. It is shown that any charge leak mechanism based on continuous conduction current would contribute noise. Pulsed conduction of current from the amplifier input avoids this problem. A method for pulsed removal of charge is proposed here, based on charge pumping via the detector capacitance and the gate-channel junction of the input field-effect transistor. In this configuration the detector is the only component connected to the gate of the field-effect transistor, and these two are the only components required to be in the cryostat. The detector capacitance serves also as feedback capacitance.
  • Keywords
    Capacitance; Charge pumps; FETs; Feedback; Pulse amplifiers; Radiation detectors; Resistors; Semiconductor device noise; X-ray detection; X-ray detectors;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1970.4325721
  • Filename
    4325721