DocumentCode
796247
Title
Charge Amplification without Charge Leak Resistor
Author
Radeka, V.
Author_Institution
Brookhaven National Laboratory Upton, New York
Volume
17
Issue
3
fYear
1970
fDate
6/1/1970 12:00:00 AM
Firstpage
433
Lastpage
439
Abstract
Charge amplification without the conventional charge leak resistor is considered. It is shown that any charge leak mechanism based on continuous conduction current would contribute noise. Pulsed conduction of current from the amplifier input avoids this problem. A method for pulsed removal of charge is proposed here, based on charge pumping via the detector capacitance and the gate-channel junction of the input field-effect transistor. In this configuration the detector is the only component connected to the gate of the field-effect transistor, and these two are the only components required to be in the cryostat. The detector capacitance serves also as feedback capacitance.
Keywords
Capacitance; Charge pumps; FETs; Feedback; Pulse amplifiers; Radiation detectors; Resistors; Semiconductor device noise; X-ray detection; X-ray detectors;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1970.4325721
Filename
4325721
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