DocumentCode :
796336
Title :
Radiation Resistance of Microelectronic Systems
Author :
Tiainen, O.J.A. ; Jauho, P.
Author_Institution :
Department of Technical Physics, Technical University of Helsinki, Otaniemi, Finland
Volume :
17
Issue :
4
fYear :
1970
Firstpage :
3
Lastpage :
9
Abstract :
The radiation resistance of microcircuit systems has been studied by testing separate microcircuits and using statistics based on known data of the transistor damage coefficients. The logic gates with bipolar transistors can be characterized by a transistor base transit time, tb, defined as tb=0.2/f¿ where f¿ is the alpha cutoff frequency. When tbÿ < 105ns/cm2 the separate gates almost certainly survive, failure almost certainly occuring when tbÿ > 107ns/cm2. The quantity ÿ is the fast neutron exposure of a reactor spectrum (E > 10 keV).
Keywords :
Bipolar transistors; Circuits; Histograms; Inductors; Logic gates; Logic testing; Microelectronics; Neutrons; Physics; Voltage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1970.4325732
Filename :
4325732
Link To Document :
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