Title :
An investigation of ultrafast plasma dynamics in a GaAs infrared reflection switch
Author :
Meyer, Jochen ; Elezzabi, Abdulhakem Y. ; Hughes, Michael K Y
Author_Institution :
Dept. of Phys., British Columbia Univ., Vancouver, BC, Canada
fDate :
7/1/1995 12:00:00 AM
Abstract :
We report on a study of optically induced transient infrared reflectivity at 10.6 μm of a GaAs wafer. The basic characteristics and the photogenerated plasma behavior of the reflection switch are discussed. A model is proposed to explain the observed time resolved and integrated reflectivity. Here, diffusion and a two body recombination mechanism whose rate is taken to be dependent on the carrier density, are used to model the plasma evolution. The experimental observations are found to be consistent with the model
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; optical switches; reflectivity; semiconductor plasma; semiconductor switches; 10.6 mum; GaAs; carrier density; diffusion; infrared reflection switch; integrated reflectivity; optically induced transient infrared reflectivity; photogenerated plasma; plasma evolution; reflection switch; time resolved reflectivity; two body recombination mechanism; ultrafast plasma dynamics; Free electron lasers; Gallium arsenide; Optical modulation; Optical pulse generation; Optical sensors; Plasmas; Reflection; Semiconductor lasers; Switches; Ultrafast optics;
Journal_Title :
Quantum Electronics, IEEE Journal of
