Author :
Sulima, O.V. ; Swaminathan, K. ; Refaat, T.F. ; Faleev, N.N. ; Semenov, A.N. ; Solov, V.A. ; Ivanov, S.V. ; Abedin, M.N. ; Singh, U.N. ; Prather, D.
Abstract :
The first AlGaAsSb/InGaAsSb phototransistors with a cutoff wavelength (50% of peak responsivity) of 2.4 μm operating in a broad range of temperatures are reported. These devices are also the first AlGaAsSb/InGaAsSb heterojunction phototransistors (HPT) grown by molecular beam epitaxy (MBE). The new MBE-grown HPT exhibited both high responsivity R (up to 2334 A/W for λ=2.05 μm at-20°C) and specific detectivity D* (up to 2.1×1011 cmHz12//W for λ=2.05μm at -20°C)
Keywords :
III-V semiconductors <2.4 μm cutoff wavel. AlGaAsSb/InGaAsSb phototransistors>; aluminium compounds <2.4 μm cutoff wavel. AlGaAsSb/InGaAsSb phototransistors>; gallium arsenide <2.4 μm cutoff wavel. AlGaAsSb/InGaAsSb phototransistors>; indium compounds <2.4 μm cutoff wavel. AlGaAsSb/InGaAsSb phototransistors>; molecular beam epitaxial growth <2.4 μm cutoff wavel. AlGaAsSb/InGaAsSb phototransistors>; phototransistors <2.4 μm cutoff wavel. AlGaAsSb/InGaAsSb phototransistors>; semiconductor epitaxial layers <2.4 μm cutoff wavel. AlGaAsSb/InGaAsSb phototransistors>; semiconductor growth <2.4 μm cutoff wavel. AlGaAsSb/InGaAsSb phototransistors>; semiconductor heterojunctions <2.4 μm cutoff wavel. AlGaAsSb/InGaAsSb phototransistors>; 2.4 micron; AlGaAsSb-InGaAsSb; MBE; cutoff wavelength; heterojunction phototransistors; molecular beam epitaxy; peak responsivity;
