Title :
SAW characteristics of GaN with n+-GaN IDTs
Author :
Nishimura, K. ; Shigekawa, N. ; Yokoyama, H. ; Hohkawa, K.
Abstract :
GaN-based surface acoustic wave (SAW) filters with Ni/n+-GaN-based interdigital transducers (IDTs) were investigated. Their RF characteristics revealed a main peak and neighbouring sidelobes, which indicates that SAWs are successfully excited in the filters. The results mean that conductive GaN layers can be used for IDTs, substituting for metal layers
Keywords :
III-V semiconductors <GaN, n+-GaN IDTs, SAW characts.>; gallium compounds <GaN, n+-GaN IDTs, SAW characts.>; interdigital transducers <GaN, n+-GaN IDTs, SAW characts.>; surface acoustic wave filters <GaN, n+-GaN IDTs, SAW characts.>; GaN; GaN-based surface acoustic wave filters; Ni/n+-GaN-based interdigital transducers; RF characteristics; conductive GaN layers; main peak; metal layers; sidelobes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20063748
