Title :
17 GHz broadband amplifier with 25 dB gain using a 0.3 μm AlGaAs/GaAs/AlGaAs HEMT technology
Author :
Lang, M. ; Berroth, M. ; Rieger-Motzer, M. ; Wang, Z.G. ; Hülsmann, A. ; Hoffmann, P. ; Kaufel, G. ; Köhler, K. ; Raynor, B.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
fDate :
11/9/1995 12:00:00 AM
Abstract :
A broadband amplifier chip based on AlGaAs/GaAs/AlGaAs quantum well FETs with 0.3 μm gate length has been designed and fabricated. The amplifier can be operated with single-ended or differential inputs with an input resistance of 50 Ω. The output signals are differential with both internal load resistances at 100 Ω, the chip area is 1×1 mm2, and the power consumption is ~375 mW
Keywords :
DC amplifiers; HEMT integrated circuits; MMIC amplifiers; aluminium compounds; differential amplifiers; field effect MMIC; field effect analogue integrated circuits; gallium arsenide; wideband amplifiers; 0 to 17 GHz; 0.3 micron; 100 ohm; 17 GHz; 375 mW; 50 ohm; AlGaAs-GaAs-AlGaAs; HEMT technology; amplifier chip; broadband amplifier; differential inputs; direct-coupled amplifiers; quantum well FETs; single-ended inputs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951352
