Title :
Effects of Ionizing Radiation on Monolithic PMOS Inverters
Abstract :
The problem of radiation hardening of metal-oxidesemiconductor (MOS) systems is discussed from a circuit viewpoint. An inverter chain is studied, and its performance in radiation is related to device quality. Techniques for testing and hardening circuits are given.
Keywords :
Circuit synthesis; Circuit testing; Circuits and systems; Degradation; Frequency; Ionizing radiation; Physics; Propagation delay; Pulse inverters; Radiation hardening;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1970.4325773
