DocumentCode
796739
Title
Single and dual p-doped channel In0.52Al0.48 As/InxGa1-xAs (x =0.53, 0.65) FET´s and the role of doping
Author
Chan, Yi-Jen ; Pavlidis, Dimitris
Author_Institution
Michigan Univ., Ann Arbor, MI, USA
Volume
39
Issue
3
fYear
1992
fDate
3/1/1992 12:00:00 AM
Firstpage
466
Lastpage
472
Abstract
The properties of lattice-matched (x =0.53) and strained ( x =0.65) In0.52Al0.48As/InxGa 1-xAs p-doped channel FETs are reported. The role of doping density is studied with the help of two designs (dual-channel with low doping and single-channel with high doping). The strained dual-channel devices demonstrated an improvement of mobility from 108 cm2/V-s (53% In) to 265 cm2/V-s (65% In) at 300 K. The corresponding intrinsic transconductance enhancement is from 23 Ms/mm (53% In) to 46.5 mS/mm (65% In) using 1.0 μm-long gates. The cutoff frequency (f t) also improves from 1.0 to 1.4 GHz. The impact of strain in the highly-doped single-channel device is small. The band structure under lattice-matched and strained conditions and the position of the Fermi level according to doping seem to be the main factors determining the reported features
Keywords
III-V semiconductors; aluminium compounds; carrier mobility; field effect transistors; gallium arsenide; indium compounds; semiconductor doping; semiconductor epitaxial layers; solid-state microwave devices; 1 micron; 1.0 to 1.4 GHz; 300 K; Fermi level; In0.52Al0.48As-InxGa1-x As; band structure; cutoff frequency; dual channel FET; lattice matched FETs; p-doped channel FETs; role of doping density; semiconductors; single channel FET; strain effect; strained FETs; transconductance; Capacitive sensors; Charge carrier density; Doping; Epitaxial layers; FETs; Gallium arsenide; Indium compounds; Indium gallium arsenide; Iron; Transconductance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.123464
Filename
123464
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