Title :
Photoionisation spectroscopy of traps in AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy
Author :
Klein, P.B. ; Mittereder, J.A. ; Binari, S.C. ; Roussos, J.A. ; Katzer, D.S. ; Storm, D.F.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
Photoionisation spectroscopy has been carried out in bias-stressed AlGaN/GaN high electron mobility transistors grown by MBE in order to probe the nature of the deep trapping centres responsible for stress-induced current collapse in these devices. The results indicate that a GaN buffer layer trap previously associated with current collapse in devices grown by MOCVD is responsible for induced collapse in MBE-grown structures.
Keywords :
III-V semiconductors; aluminium compounds; deep levels; gallium compounds; high electron mobility transistors; molecular beam epitaxial growth; photoionisation; spectroscopy; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HEMTs; GaN buffer layer trap; MBE growth; MBE-grown structures; bias-stressed HEMTs; deep trapping centres; high electron mobility transistors; molecular beam epitaxy; photoionisation spectroscopy; stress-induced current collapse;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030836