A Method for an Accurate Prediction of Degradation Characteristics and Quality Assurance of a 709 Amplifier

A novel method is presented whereby the neutron-induced degradation characteristics of semiconductor components can be predicted, and total assurance of operation can be attained even under severe radiation environments. The method, involving irradiation-annealing cycles is shown to be economical and reliable in the wafer stage, and feasible for packaged off the shelf hardened components. Radiation damage effects on semiconductors are discussed. Defect annealing phenomena is considered under a variety of temperature ambients. Experimental irradiate-anneal data is presented for both discrete transistors and IC dielectrically isolated 709 amplifiers manufactured by three different vendors. The results of a number of tests shows the feasibility of obtaining very accurate prediction of the components\´ degradation characteristics and as a result suggests the application of this method by the semiconductor vendor in supplying components with known quality assurance and "guaranteed" performance under a given neutron fluence.