InGaAs/In(AlGa)As RHET´s with InAs pseudomorphic base

Author

Imamura, Kenichi ; Adachihara, Takami ; Mori, Toshihiko ; Muto, Shunichi ; Yokoyama, Naoki

Author_Institution

Fujitsu Ltd., Atsugi, Japan

Volume

39

Issue

3

fYear

1992

fDate

3/1/1992 12:00:00 AM

Firstpage

479

Lastpage

483

Abstract

An InGaAs/In(AlGa)As resonant-tunneling hot-electron transistor (RHET) with an INAs pseudomorphic base to increase current gain and to reduce base resistance was designed and fabricated. The conduction band discontinuity between the InAs base and the In(AlGa)As collector barrier was estimated from the thermionic current. The band discontinuity was about 0.38 eV, which agrees well with the calculated band discontinuity taking into consideration the effect of strain. The common-emitter current gain doubled and the base resistance decreased 20% compared to InGaAs-base RHETs with the same doping concentration. A current gain cutoff frequency of 65 GHz and a maximum oscillation frequency of 50 GHz at 77 K were measured

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; hot electron transistors; indium compounds; resonant tunnelling devices; solid-state microwave devices; 50 GHz; 65 GHz; 77 K; InAs pseudomorphic base; InGaAs-InAlGaAs; RHET; base resistance; collector barrier; common-emitter current gain doubled; conduction band discontinuity; current gain; current gain cutoff frequency; doping concentration; maximum oscillation frequency; resonant-tunneling hot-electron transistor; semiconductors; thermionic current; Capacitive sensors; Current measurement; Doping; Electrical resistance measurement; Frequency measurement; Gain measurement; Gallium arsenide; Indium gallium arsenide; Research and development; Resonant tunneling devices;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.123466

Filename

123466