Title :
Current-voltage nonlinearity in the multiquantum well nin modulator structure
Author :
Goldys, E.M. ; Nott, G. ; Tansley, T.L. ; Henini, M. ; Pate, M.A. ; Hill, G.
Author_Institution :
Semicond. Sci. & Technol. Labs., Macquarie Univ., North Ryde, NSW, Australia
fDate :
11/9/1995 12:00:00 AM
Abstract :
Measured dark I-V characteristics of multiquantum well nin structures with spacer layers are discussed. Detailed modelling shows the importance of nonuniform electric field attributed to potential barriers coincident with the spacers. The nonlinear I-V characteristics are controlled by the barrier height and by the resistive contribution to the barrier current
Keywords :
electric fields; electro-optical modulation; semiconductor quantum wells; MQW n-i-n structures; barrier current; barrier height; current-voltage nonlinearity; dark I-V characteristics; light modulator; modelling; multiquantum well structures; nonlinear I-V characteristics; nonuniform electric field; potential barriers; spacer layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951366
