DocumentCode
797015
Title
High speed, high efficiency modulator module with polarisation insensitivity and very low chirp
Author
Wakita, K. ; Yoshino, K. ; Kotaka, I. ; Kondo, S. ; Noguchi, Y.
Author_Institution
NTT Opto-Electron. Labs., Kanagawa, Japan
Volume
31
Issue
23
fYear
1995
fDate
11/9/1995 12:00:00 AM
Firstpage
2041
Lastpage
2042
Abstract
Low chirp (α<1), polarisation-insensitive (<1 dB) electroabsorption modulator modules with high speed (~20 GHz) and high efficiency (1.5 V for a 20 dB on/off ratio) are fabricated by using strain-compensated InGaAs-InAlAs multiquantum well structures. These characteristics are obtained over a wide range of applied bias voltages and wavelengths near 1.55 μm
Keywords
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; optical waveguides; semiconductor quantum wells; 1.5 V; 1.55 micron; 20 GHz; InGaAs-InAlAs; electroabsorption modulator; high efficiency modulator module; high speed operation; low chirp; multiquantum well structures; polarisation insensitivity; strain-compensated MQW;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19951369
Filename
490627
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