Title :
Experimental drain current drop-back in GaAs MESFETs
Author :
Fobelets, K. ; Borghs, G. ; Hegarty, J.
Author_Institution :
Dept. of Phys., Trinity Coll., Dublin, Ireland
fDate :
11/9/1995 12:00:00 AM
Abstract :
The authors demonstrate experimentally for the first time drain current drop-back at low drain voltages in GaAs MESFETs. This negative differential conductance is caused by the Gunn effect. The pronounced current drop-back is attributed to the special layer structure of the MESFET
Keywords :
Gunn effect; III-V semiconductors; Schottky gate field effect transistors; electric current; gallium arsenide; GaAs; Gunn effect; MESFET; drain current drop-back; low drain voltages; negative differential conductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951401
