DocumentCode :
797034
Title :
InP/InGaAs heterojunction bipolar transistor with extremely high fτ over 200 GHz
Author :
Oka, T. ; Tanoue, T. ; Masuda, H. ; Ouchi, K. ; Mozume, T.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Volume :
31
Issue :
23
fYear :
1995
fDate :
11/9/1995 12:00:00 AM
Firstpage :
2044
Lastpage :
2045
Abstract :
An extremely high-speed InP/InGaAs heterojunction bipolar transistor (HBT) using a self-alignment technique is described. A cutoff frequency (fτ) of 209 GHz and a maximum oscillation frequency (fmax) of 13 GHz were achieved by using a thin base width of 30 nm and reducing parasitic capacitance and resistance through a self-alignment technique. The maximum current gain was 102 and the collector-emitter breakdown voltage (BVCEO) was 5.2 V
Keywords :
III-V semiconductors; electric breakdown; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; 138 GHz; 209 GHz; 5.2 V; InP-InGaAs; collector-emitter breakdown voltage; cutoff frequency; heterojunction bipolar transistor; high-speed HBT; maximum oscillation frequency; parasitic capacitance reduction; parasitic resistance reduction; self-alignment technique;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19951388
Filename :
490629
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=797034
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