DocumentCode
797050
Title
npn controlled lateral insulated gate bipolar transistor
Author
Qin, Zuxin ; Sankara Narayanan, E.M.
Author_Institution
Dept. of Electr. & Electron. Eng., De Monfort Univ., Leicester, UK
Volume
31
Issue
23
fYear
1995
fDate
11/9/1995 12:00:00 AM
Firstpage
2045
Lastpage
2047
Abstract
A fast switching npn controlled lateral insulated gate bipolar transistor (NC-LIGBT) suitable for high voltage integrated circuits is proposed. An open base npn transistor incorporated within the device strongly influences its on-state and switching behaviour. Further, by varying the ratio between n+/p+ regions or the concentration of the p well at the anode end, a suitable trade-off between forward drop and turn-off time can be easily realised by this single gated device
Keywords
insulated gate bipolar transistors; monolithic integrated circuits; power integrated circuits; HV IC application; fast switching n-p-n device; high voltage integrated circuits; insulated gate bipolar transistor; lateral IGBT; npn controlled IGBT; single gated device; switching behaviour;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19951344
Filename
490630
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