Title :
npn controlled lateral insulated gate bipolar transistor
Author :
Qin, Zuxin ; Sankara Narayanan, E.M.
Author_Institution :
Dept. of Electr. & Electron. Eng., De Monfort Univ., Leicester, UK
fDate :
11/9/1995 12:00:00 AM
Abstract :
A fast switching npn controlled lateral insulated gate bipolar transistor (NC-LIGBT) suitable for high voltage integrated circuits is proposed. An open base npn transistor incorporated within the device strongly influences its on-state and switching behaviour. Further, by varying the ratio between n+/p+ regions or the concentration of the p well at the anode end, a suitable trade-off between forward drop and turn-off time can be easily realised by this single gated device
Keywords :
insulated gate bipolar transistors; monolithic integrated circuits; power integrated circuits; HV IC application; fast switching n-p-n device; high voltage integrated circuits; insulated gate bipolar transistor; lateral IGBT; npn controlled IGBT; single gated device; switching behaviour;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951344
