Title :
Silicon direct bonding technology employing a regularly grooved surface
Author :
Kim, E.D. ; Kim, N.K. ; Kim, S.C. ; Grekhov, I.V. ; Argunova, T.V. ; Kostina, L.S. ; Kudryavtseva, T.V.
Author_Institution :
Korea Electrotechnol. Res. Inst., Changwon, South Korea
fDate :
11/9/1995 12:00:00 AM
Abstract :
We introduce a modified-SDB technique likely to decrease the defect density by employing a groove network on the surface of a wafer to be bonded. The main goal in this method is to achieve a high structural quality not only at the bonded interface but also in the bulk by gettering the dislocations of initial contact boundaries at the free surfaces of the artificial grooves. Interfacial properties and the structural perfection of the silicon structures manufactured by the modified method are briefly reported
Keywords :
dislocations; elemental semiconductors; getters; interface phenomena; silicon; wafer bonding; Si; defect density reduction; direct bonding technology; dislocations; gettering; high structural quality; interfacial properties; modified-SDB technique; regularly grooved surface;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951373
