DocumentCode
797061
Title
Ion-implanted In(x)Ga(1-x)As MESFET´s on GaAs substrate for low-cost millimeter-wave IC application
Author
Feng, Milton ; Lau, Chun-Lin
Author_Institution
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Volume
39
Issue
3
fYear
1992
fDate
3/1/1992 12:00:00 AM
Firstpage
484
Lastpage
493
Abstract
Ion-implanted In(x)Ga(1-x) As MESFETs on GaAs substrate are very attractive devices for ultra-high-frequency and ultra-high-speed integrated circuit applications due to the simplicity of material structure and manufacturability of ion implantation technology. The advances in ion-implanted In(x)Ga(1-x) As/GaAs MESFET technology are reviewed, focusing on material structures, device fabrications, manufacturability, current gain cutoff frequency, and maximum power oscillation frequency performance, as well as low noise, power, and oscillator performance in the millimeter-wave frequency range
Keywords
III-V semiconductors; MMIC; Schottky gate field effect transistors; electron device noise; equivalent circuits; field effect integrated circuits; gallium arsenide; indium compounds; ion implantation; solid-state microwave devices; GaAs substrate; InxGa1-xAs-GaAs; MESFETs; MM-wave devices; current gain cutoff frequency; device fabrications; ion implantation; manufacturability; material structures; maximum power oscillation frequency; millimeter-wave IC; millimeter-wave frequency range; semiconductors; Application specific integrated circuits; Cutoff frequency; Fabrication; Gallium arsenide; Integrated circuit manufacture; Integrated circuit technology; Ion implantation; MESFET integrated circuits; Manufacturing; Performance gain;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.123467
Filename
123467
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