Title :
The SIMEST: an EST structure without parasitic thyristor achieved using SIMOX technology
Author :
Sridhar, S. ; Baliga, B.J.
Author_Institution :
Power Semicond. Res. Centre, North Carolina State Univ., Raleigh, NC, USA
fDate :
11/9/1995 12:00:00 AM
Abstract :
A new emitter switched thyristor (EST) structure, in which the lateral N-channel MOSFET is isolated from the thyristor by using SIMOX technology to eliminate the parasitic thyristor, is presented. This structure is experimentally demonstrated to exhibit high voltage current saturation at large gate biases beyond the breakdown voltage of the lateral N-channel MOSFET and a lower on-state voltage drop than the dual channel EST
Keywords :
MOS-controlled thyristors; MOSFET; SIMOX; isolation technology; EST structure; SIMEST; emitter switched thyristor; high voltage current saturation; isolation technique; lateral N-channel MOSFET; parasitic-thyristor-free structure; thyristor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951374
