• DocumentCode
    79711
  • Title

    Ferroelectric Artificial Synapses for Recognition of a Multishaded Image

  • Author

    Kaneko, Yuya ; Nishitani, Yu. ; Ueda, Makoto

  • Author_Institution
    Adv. Technol. Res. Labs., Panasonic Corp., Kyoto, Japan
  • Volume
    61
  • Issue
    8
  • fYear
    2014
  • fDate
    Aug. 2014
  • Firstpage
    2827
  • Lastpage
    2833
  • Abstract
    We demonstrate, for the first time, the on-chip pattern recognition of a multishaded grayscale image in a neural network circuit with multiple neurons. This pattern recognition is based on a spiking neural network model that uses multiple three-terminal ferroelectric memristors (3T-FeMEMs) as synapses. The synapse chip of the neural network is formed by stacking CMOS circuits and 3T-FeMEMs. The conductance of the 3T-FeMEM is gradually changed in the linear range by varying the amplitude of the applied voltage pulse. Using the analog and nonvolatile conductance change of the 3T-FeMEM as synaptic weight, the matrix patterns are learned after the spike timing-dependent plasticity learning rule. Even when an incomplete multishaded pattern is input to the neural network circuit, it automatically completes and recalls a previously learned pattern.
  • Keywords
    CMOS integrated circuits; ferroelectric devices; image recognition; memristors; neural chips; 3T-FeMEM conductance; analog conductance change; applied voltage pulse amplitude; ferroelectric artificial synapses; matrix patterns; multiple neurons; multiple three-terminal ferroelectric memristors; multishaded grayscale image recognition; neural network circuit; nonvolatile conductance change; on-chip pattern recognition; spike timing-dependent plasticity learning rule; spiking neural network model; stacking CMOS circuits; synaptic weight; Biological neural networks; Electrodes; Logic gates; Neurons; Pattern recognition; Timing; Artificial neural network; ferroelectric devices; memristor; neural network hardware; nonvolatile memory; pattern recognition; pattern recognition.;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2014.2331707
  • Filename
    6848780