Title :
Effects of source/drain implants on short-channel MOSFET I-V and C-V characteristics
Author :
Huang, Cheng-Liang ; Khalil, Nadim A. ; Arora, Narain D. ; Zetterlund, Bjom ; Bair, Lawrence A.
Author_Institution :
Digital Equipment Corp., Hudson, MA, USA
fDate :
7/1/1995 12:00:00 AM
Abstract :
The effects of source/drain implants on n-channel MOSFET I-V and C-V characteristics are measured and compared for the lightly doped drain (LDD) and the large-angle-tilt implanted drain (LATID) devices. We show that despite substantial improvement in hot-carrier reliability for LATID devices, the LATID design might have a limited range of application for short-channel MOSFETs. This is because as a result of enhanced VTH roll-off and increased overlap capacitance for the LATID devices compared to LDD devices, the device/circuit performance degrades. The degradation of performance becomes more pronounced as device length is reduced. These results are confirmed by both experimental data and 2-dimensional numerical simulations
Keywords :
MOSFET; capacitance; hot carriers; ion implantation; semiconductor device reliability; semiconductor device testing; 2D numerical simulations; C-V characteristics; I-V characteristics; LATID design; LDD devices; enhanced VTH roll-off; hot-carrier reliability; large-angle-tilt implanted drain devices; lightly doped drain device; n-channel MOSFET; overlap capacitance; performance degradation; short-channel MOSFET; source/drain implants; CMOS process; CMOS technology; Capacitance; Capacitance-voltage characteristics; Degradation; Hot carrier effects; Hot carriers; Implants; MOSFET circuits; Numerical simulation;
Journal_Title :
Electron Devices, IEEE Transactions on
