A new constant-field scaling theory for MOSFET´s

Author

Maa, Jiin-Jang ; Wu, Ching-Yuan

Author_Institution

Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

42

Issue

7

fYear

1995

fDate

7/1/1995 12:00:00 AM

Firstpage

1262

Lastpage

1268

Abstract

The constant-field scaling theory (CONFIST) is evaluated in this work. The persistence of the drain-induced barrier lowering characteristics is selected to be an essential condition of the CONFIST. Assessment on the accuracy of various constraint equations for MOS device miniaturization is carried out and the application limitations of these equations are studied in detail. The intrinsic incompleteness of the original CONFIST is then revealed by scaling the constraint equation. It is found that the restriction of requiring an invariant Poisson equation after scaling in the original CONFIST must be released to prevent the scaling from being limited by the quasi-body effect. The original CONFIST is revised accordingly, and the modified version (CONFIST-2) shows that the application limit of the original CONFIST is about 0.5 μm and the vertical dimensions must be scaled more than the lateral ones

Keywords

MOSFET; constraint theory; semiconductor device models; 0.5 mum; CONFIST-2; MOS device miniaturization; MOSFET; constant-field scaling theory; constraint equations; drain-induced barrier lowering characteristics; invariant Poisson equation; quasi-body effect; vertical dimension scaling; Councils; Dielectrics; Doping; MOS devices; MOSFET circuits; Permittivity; Poisson equations; Semiconductor devices; Substrates; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.391208

Filename

391208