Title :
Electrical characteristics of oxide-nitride-oxide films formed on tunnel-structured stacked capacitors
Author :
Matsuo, Naoto ; Sasaki, Akio
fDate :
7/1/1995 12:00:00 AM
Abstract :
Current conduction mechanism of oxide-nitride-oxide films formed on tunnel-structured stacked capacitor (TSSC) was studied. At positive and negative bias, the Poole-Frenkel (P-F) conduction of holes in the nitride (SiNx) film dominates the total leakage current. From the P-F plot, the relative dielectric constant of the SiNx was calculated. The electric field inside the structure was also calculated by assuming the model that characterizes the electrode shape inside the tunnel. From the results, the reason why the reliability of the TSSC is not lowered in comparison with the conventional stacked capacitor is discussed
Keywords :
DRAM chips; MIS capacitors; Poole-Frenkel effect; dielectric thin films; integrated circuit reliability; leakage currents; permittivity; silicon compounds; ONO films; Poole-Frenkel conduction; SiNx film; SiO2-Si3N4-SiO2; current conduction mechanism; electrical characteristics; leakage current; oxide-nitride-oxide films; relative dielectric constant; reliability; tunnel-structured stacked capacitors; Capacitors; Chemical vapor deposition; Conductive films; Electric variables; Electrodes; Gases; Optical films; Random access memory; Scanning electron microscopy; Shape;
Journal_Title :
Electron Devices, IEEE Transactions on
