DocumentCode :
797441
Title :
Bulk Undoped GaAs–AlGaAs Substrate-Removed Electrooptic Modulators With 3.7-V-cm Drive Voltage at 1.55 
m
Author :
Shin, JaeHyuk ; Wu, Shaomin ; Dagli, Nadir
Author_Institution :
Electr. Eng. Dept., California Univ., Santa Barbara, CA
Volume :
18
Issue :
21
fYear :
2006
Firstpage :
2251
Lastpage :
2253
Abstract :
Substrate removed bulk GaAs-AlGaAs electrooptic modulators with 3.7-V-cm drive voltage at 1.55 mum were realized. The 1.94-mum-thick undoped GaAs-AlGaAs epilayer removed from its substrate behaves as an electrooptic dielectric layer and has electrodes placed directly on both sides. This allows a very strong modulating electric field overlapping very well with the optical mode. The propagation loss in the presence of electrodes is less than 2.9dB/cm. There is very good agreement between the measured and simulated values
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; electrodes; gallium arsenide; integrated optics; optical losses; semiconductor epitaxial layers; 1.55 mum; 1.94 mum; GaAs-AlGaAs; bulk GaAs-AlGaAs modulators; electrodes; electrooptic dielectric layer; electrooptic modulators; modulating electric field; optical mode; propagation loss; substrate-removed modulators; undoped GaAs-AlGaAs epilayer; Chirp modulation; Dielectric substrates; Electrodes; Electrooptic modulators; Optical devices; Optical interferometry; Optical modulation; Optical refraction; Optical waveguides; Voltage; Electrooptic modulators; GaAs modulators; optical modulators;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2006.884729
Filename :
1715391
Link To Document :
