Scattering parameter measurements of resonant tunneling diodes up to 40 GHz

Author

Wei, T. ; Stapleton, S. ; Berolo, O.

Author_Institution

Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada

Volume

42

Issue

7

fYear

1995

fDate

7/1/1995 12:00:00 AM

Firstpage

1378

Lastpage

1380

Abstract

The scattering parameters (S parameters) of double barrier quantum well resonant tunneling diodes have been measured at various biases with on-wafer probing techniques. Impedances up to 40 GHz for AlGaAs/GaAs diodes with asymmetric spacer layers were obtained. It was found that the impedances could be accurately described by the lumped equivalent circuit representation. With the conductance-voltage characteristic derived from high frequency S parameter measurement, the portions of current-voltage curve that were distorted by oscillation in the dc measurement are recovered. Peaks corresponding to the process of electrons discharging from the quantum well are found in the capacitance-voltage (C-V) characteristic

Keywords

III-V semiconductors; S-parameters; aluminium compounds; characteristics measurement; equivalent circuits; gallium arsenide; microwave diodes; resonant tunnelling diodes; semiconductor quantum wells; 45 MHz to 40 GHz; AlGaAs-GaAs; asymmetric spacer layers; capacitance-voltage characteristic; conductance-voltage characteristic; current-voltage curve; double barrier quantum well diodes; high frequency S parameter measurement; lumped equivalent circuit; on-wafer probing techniques; resonant tunneling diodes; scattering parameter measurement; Capacitance-voltage characteristics; Current measurement; Diodes; Distortion measurement; Equivalent circuits; Frequency measurement; Gallium arsenide; Impedance; Resonant tunneling devices; Scattering parameters;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.391225

Filename

391225