Solution Processed Polymer Near-Infrared Photodiode With Electron and Hole Blockers

Author

Chi Hang Cheung ; Do Young Kim ; Subbiah, J. ; Amb, Chad M. ; Reynolds, John R. ; So, Franky

Author_Institution

Dept. of Mater. Sci. & Eng., Univ. of Florida, Gainesville, FL, USA

Volume

61

Issue

11

fYear

2014

fDate

Nov. 2014

Firstpage

3852

Lastpage

3857

Abstract

A solution-processed polymer near-infrared photodetector with charge blocking layers is reported using a low-bandgap polymer, poly[(4,4´-bis(2-ethylhexyl)dithieno [3, 2-b:2´,3´-d]silole)-2,6-diyl-alt-(2,1,3-benzothiadiazole)4,7-diyl]. Zinc oxide nanoparticles and poly[(9,9´-dioctylfluorenyl-2,7-diyl)-co-(4,4´-(N-(4-sec-butyl))diphenylamine)] are used as a hole blocking layer and an electron blocking layer, respectively. A maximum detectivity of 2 × 10¹³ Jones is achieved with a 330-nm-thick photoactive layer that absorbs 98% of the incident light at 780 nm.

Keywords

II-VI semiconductors; infrared detectors; light absorption; nanoparticles; optical polymers; organic semiconductors; photodetectors; photodiodes; wide band gap semiconductors; zinc compounds; ZnO; charge blocking layers; electron blocking layer; hole blocking layer; incident light; low-bandgap polymer; photoactive layer; poly[(4,4´-bis(2-ethylhexyl)dithieno [3,2-b:2´,3´-d]silole)-2,6-diyl-alt-(2,1,3-benzothiadiazole)4,7-diyl]; poly[(9,9´-dioctylfluorenyl-2,7-diyl)-co-(4,4´-(N-(4-sec-butyl))diphenylamine)]; size 330 nm; solution processed polymer near-infrared photodiode; solution-processed polymer near-infrared photodetector; wavelength 780 nm; zinc oxide nanoparticles; Absorption; Charge carrier processes; Dark current; Educational institutions; Photodetectors; Polymers; Zinc oxide; Charge carrier blocking layers; near-infrared (IR) photodetectors (PDs); polymer semiconductors; solution-processed;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2357022

Filename

6906249