DocumentCode :
797537
Title :
Progress in the fabrication of γ-ray detectors from high purity germanium
Author :
Baertsch, R.D.
Author_Institution :
General Electric Research and Development Center Schenectady, New York 12301
Volume :
18
Issue :
1
fYear :
1971
Firstpage :
166
Lastpage :
169
Abstract :
A planar detector with a depletion layer width of 8mm has been fabricated from high purity germanium. A total system resolution of 2.4 keV at 1.33MeV is obtained with 600 volts bias on this detector. Another detector with a 3mm thick depletion region which was operated at 2000 volts bias yielded a system resolution of 1.65 keV at 1.33 MeV. Thin window detectors have been fabricated by using a glow discharge of BF3 or PF5. This technique has also been used to form ohmic contacts on high purity germanium.
Keywords :
Annealing; Detectors; Electrical resistance measurement; Fabrication; Germanium; Glow discharges; Ohmic contacts; Surface discharges; Surface resistance; Voltage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1971.4325858
Filename :
4325858
Link To Document :
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