DocumentCode :
79816
Title :
In-Plane Optical Absorption and Free Carrier Absorption in Graphene-on-Silicon Waveguides
Author :
Zhenzhou Cheng ; Hon Ki Tsang ; Xiaomu Wang ; Ke Xu ; Jian-Bin Xu
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, China
Volume :
20
Issue :
1
fYear :
2014
fDate :
Jan.-Feb. 2014
Firstpage :
43
Lastpage :
48
Abstract :
We experimentally study the in-plane optical absorption and free carrier absorption (FCA) in graphene-on-silicon waveguides using a pump-probe measurement over microsecond timescales. The silicon waveguide is fabricated using complementary metal-oxide-semiconductor compatible processes, and directly covered by a graphene layer. Saturable absorption in the graphene is observed at the beginning of the pump pulse followed by an increase in absorption. The increase in absorption builds up over several microseconds, and is experimental evidence that free carriers generated by the pump absorption in graphene can transfer into silicon waveguides. The FCA in silicon waveguides eventually dominates the optical loss, which reaches ~9 dB, after several microseconds. All-optical modulations of the probe light are thus demonstrated. There is also a large thermally induced change in waveguide effective refractive index because of the optical absorption in the graphene.
Keywords :
graphene; high-speed optical techniques; integrated optics; optical fabrication; optical losses; optical materials; optical pumping; optical saturable absorption; optical waveguides; refractive index; silicon; C; C-Si; FCA; Si; all-optical modulations; complementary metal-oxide-semiconductor compatible processes; free carrier absorption; graphene-on-silicon waveguides; in-plane optical absorption; optical loss; pump-probe measurement; saturable absorption; Graphene; Integrated optics; Silicon photonics; Graphene; free carrier absorption; integrated optics; nonlinear optics; silicon on insulator (SOI) technology; silicon photonics;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2013.2263115
Filename :
6521343
Link To Document :
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