Title :
Benign mechanism giving rise to kinks in GaAs MESFET and HEMT I(V) characteristics
Author :
Ladbrooke, P.H. ; Bridge, J.P.
Author_Institution :
GaAs Code Ltd., Cambridge, UK
fDate :
10/26/1995 12:00:00 AM
Abstract :
Kinks in GaAs MESFET and HEMT I(V) characteristics may arise from a change in the depletion layer dimensions caused by redistribution of the two-dimensional electric field when the space-charge layer reaches the drain-side recess edge. The mechanism is benign in that it does not question material quality and growth
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; high electron mobility transistors; space charge; GaAs; HEMT; I-V characteristics; MESFET; depletion layer; kinks; space charge; two-dimensional electric field;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951314
