DocumentCode :
798171
Title :
Development of Heterojunction Diode-Type Gamma Ray Detectors Based on Epitaxially Grown Thick CdTe on 
-Si Substrates
-Si SubstratesAuthor :
Yasuda, K. ; Niraula, M. ; Noda, K. ; Yokota, M. ; Ohashi, H. ; Nakamura, K. ; Omura, M. ; Shingu, I. ; Minoura, S. ; Tanaka, R. ; Agata, Y.
Author_Institution :
Graduate Sch. of Eng., Nagoya Inst. of Technol.
Volume :
27
Issue :
11
fYear :
2006
Firstpage :
890
Lastpage :
892
Abstract :
Room temperature nuclear radiation detectors with energy discrimination capability developed by growing thick cadmium telluride (CdTe) epitaxial layers directly on n+-Si substrates in a metal-organic vapor phase epitaxy system is reported for the first time. The CdTe/n+-Si heterojunction diode detector exhibited good rectification and charge collection properties. The reverse leakage currents were typically 1times10-7 to 5times10-7 A/cm2 at 50-V bias. The detector clearly demonstrated its energy discrimination capability by resolving gamma peak from the 241Am radioisotope during radiation detection test at room temperature
Keywords :
cadmium compounds; epitaxial growth; epitaxial layers; gamma-ray detection; particle detectors; silicon; 50 V; MOVPE; charge collection; energy resolution; gamma ray detectors; heterojunction diode detector; leakage currents; metal-organic vapor phase epitaxy system; radiation detection test; radioisotope; rectification; room temperature nuclear radiation detectors; thick cadmium telluride epitaxial layers growth; thick substrates; Cadmium compounds; Diodes; Envelope detectors; Epitaxial growth; Epitaxial layers; Gamma ray detectors; Heterojunctions; Radiation detectors; Substrates; Temperature; Cadmium telluride (CdTe) epitaxial layers; energy resolution; gamma ray detector; heterojunction diode; metal–organic vapor phase epitaxy (MOVPE);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2006.884723
Filename :
1715457
Link To Document :
