• DocumentCode
    798182
  • Title

    Etching processes for optoelectronic devices employing periodic multilayers of InGaAs/InAlAs

  • Author

    Ashby, C.I.H. ; Howard, A.J. ; Vawter, G.A. ; Briggs, R.D. ; Hafich, M.J.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • Volume
    31
  • Issue
    22
  • fYear
    1995
  • fDate
    10/26/1995 12:00:00 AM
  • Firstpage
    1948
  • Lastpage
    1950
  • Abstract
    Nonselective reactive ion beam etching (RIBE) using Cl2/Ar mixtures at elevated temperatures and two isotropic wet chemistries (HCl/HNO3/H2O2 and HCl/H2O2/H2O) have been developed for fabricating 1.3 mμ optical transmission modulators employing periodic multilayers of InGaAs/InAlAs
  • Keywords
    III-V semiconductors; aluminium compounds; electro-optical modulation; etching; gallium arsenide; indium compounds; optical fabrication; 1.3 micron; Cl2/Ar mixtures; HCl/H2O2/H2O; HCl/HNO3/H2O2; InGaAs-InAlAs; elevated temperatures; fabrication; isotropic wet etching; nonselective reactive ion beam etching; optical transmission modulators; optoelectronic devices; periodic multilayers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19951292
  • Filename
    490680
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=798182