DocumentCode :
798182
Title :
Etching processes for optoelectronic devices employing periodic multilayers of InGaAs/InAlAs
Author :
Ashby, C.I.H. ; Howard, A.J. ; Vawter, G.A. ; Briggs, R.D. ; Hafich, M.J.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Volume :
31
Issue :
22
fYear :
1995
fDate :
10/26/1995 12:00:00 AM
Firstpage :
1948
Lastpage :
1950
Abstract :
Nonselective reactive ion beam etching (RIBE) using Cl2/Ar mixtures at elevated temperatures and two isotropic wet chemistries (HCl/HNO3/H2O2 and HCl/H2O2/H2O) have been developed for fabricating 1.3 mμ optical transmission modulators employing periodic multilayers of InGaAs/InAlAs
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; etching; gallium arsenide; indium compounds; optical fabrication; 1.3 micron; Cl2/Ar mixtures; HCl/H2O2/H2O; HCl/HNO3/H2O2; InGaAs-InAlAs; elevated temperatures; fabrication; isotropic wet etching; nonselective reactive ion beam etching; optical transmission modulators; optoelectronic devices; periodic multilayers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19951292
Filename :
490680
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=798182
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