• DocumentCode
    798191
  • Title

    High breakdown voltage Schottky barrier diode using p+-polycrystalline silicon diffused guard ring

  • Author

    Wen Liou, Bor ; Len Lee, Chung ; Fu Lei, Tan

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    31
  • Issue
    22
  • fYear
    1995
  • fDate
    10/26/1995 12:00:00 AM
  • Firstpage
    1950
  • Lastpage
    1951
  • Abstract
    A new Schottky Diode Structure which uses the p+-polycrystalline silicon (polysilicon) diffused guard ring is proposed. The diode gives nearly ideal J-V characteristics with a high reverse breakdown (148 V) and a low reverse leakage current density (8.4 μA/cm2)
  • Keywords
    Schottky diodes; electric breakdown; 148 V; J-V characteristics; Schottky barrier diode; Si; breakdown voltage; leakage current density; p+-polycrystalline silicon diffused guard ring;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19951315
  • Filename
    490681
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=798191