DocumentCode :
798191
Title :
High breakdown voltage Schottky barrier diode using p+-polycrystalline silicon diffused guard ring
Author :
Wen Liou, Bor ; Len Lee, Chung ; Fu Lei, Tan
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
31
Issue :
22
fYear :
1995
fDate :
10/26/1995 12:00:00 AM
Firstpage :
1950
Lastpage :
1951
Abstract :
A new Schottky Diode Structure which uses the p+-polycrystalline silicon (polysilicon) diffused guard ring is proposed. The diode gives nearly ideal J-V characteristics with a high reverse breakdown (148 V) and a low reverse leakage current density (8.4 μA/cm2)
Keywords :
Schottky diodes; electric breakdown; 148 V; J-V characteristics; Schottky barrier diode; Si; breakdown voltage; leakage current density; p+-polycrystalline silicon diffused guard ring;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19951315
Filename :
490681
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=798191
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