• DocumentCode
    798203
  • Title

    A Study on the Pd/a-Si/Ni Seed Layer for Metal-Induced Lateral Crystallization and Poly-Si TFTs

  • Author

    Song, Nam-Kyu ; Kim, Min-Sun ; Pyo, Yu-Jin ; Joo, Seung-Ki

  • Author_Institution
    Sch. of Mater. Sci. & Eng., Seoul Nat. Univ.
  • Volume
    27
  • Issue
    11
  • fYear
    2006
  • Firstpage
    899
  • Lastpage
    901
  • Abstract
    The effect of Pd on the growth rate of metal-induced lateral crystallization (MILC) from Ni seed and the electrical properties of thin-film transistors (TFTs) fabricated on the films crystallized by MILC were investigated. When the Pd metal is placed on the amorphous-silicon/Ni-seed layer, the MILC growth rate is two to three times faster than that of conventional Ni-MILC, without any degradation of TFTs. These results were explained by a stress that is generated by the formation of Pd2Si
  • Keywords
    amorphous semiconductors; crystallisation; nickel; palladium; semiconductor thin films; silicon; thin film transistors; Pd-Si-Ni; Pd2Si; electrical properties; metal-induced lateral crystallization; poly-Si TFT; thin film transistors; Annealing; Crystallization; Glass; Microstructure; Microwave integrated circuits; Sputter etching; Sputtering; Substrates; Temperature; Thin film transistors; Metal-induced lateral crystallization (MILC); Pd; poly-Si thin-film transistors (TFTs);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2006.883559
  • Filename
    1715460
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=798203