Title :
A Study on the Pd/a-Si/Ni Seed Layer for Metal-Induced Lateral Crystallization and Poly-Si TFTs
Author :
Song, Nam-Kyu ; Kim, Min-Sun ; Pyo, Yu-Jin ; Joo, Seung-Ki
Author_Institution :
Sch. of Mater. Sci. & Eng., Seoul Nat. Univ.
Abstract :
The effect of Pd on the growth rate of metal-induced lateral crystallization (MILC) from Ni seed and the electrical properties of thin-film transistors (TFTs) fabricated on the films crystallized by MILC were investigated. When the Pd metal is placed on the amorphous-silicon/Ni-seed layer, the MILC growth rate is two to three times faster than that of conventional Ni-MILC, without any degradation of TFTs. These results were explained by a stress that is generated by the formation of Pd2Si
Keywords :
amorphous semiconductors; crystallisation; nickel; palladium; semiconductor thin films; silicon; thin film transistors; Pd-Si-Ni; Pd2Si; electrical properties; metal-induced lateral crystallization; poly-Si TFT; thin film transistors; Annealing; Crystallization; Glass; Microstructure; Microwave integrated circuits; Sputter etching; Sputtering; Substrates; Temperature; Thin film transistors; Metal-induced lateral crystallization (MILC); Pd; poly-Si thin-film transistors (TFTs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.883559
