Title :
Modeling the thermal response of semiconductor devices through equivalent electrical networks
Author :
Codecasa, L. ; Amore, Dario D. ; Maffezzoni, Palio
Author_Institution :
Dipt. di Elettronica e Inf., Politecnico di Milano, Italy
fDate :
8/1/2002 12:00:00 AM
Abstract :
The paper presents a general approach for modeling the effects of thermal response in semiconductor devices as they are seen at the electrical terminals. It is shown that this can be achieved by properly connecting at the electrical ports an equivalent electrical network representing the transformed thermal impedance. The equivalent model is employed to investigate electrothermal interactions in MOSFETs and bipolar junction transistors. Precise conditions for which electrothermal resonant oscillations arise are deduced and an experimental technique for thermal-impedance extraction is presented.
Keywords :
MOSFET; bipolar transistors; equivalent circuits; semiconductor device models; thermal analysis; thermal stability; MOSFETs; bipolar junction transistors; electrical terminals; electrothermal analysis; electrothermal interactions; electrothermal resonant oscillations; equivalent electrical network; equivalent model; modeling; semiconductor devices; thermal instability; thermal response; thermal-impedance extraction; transformed thermal impedance; Circuits; Electrothermal effects; Equations; Impedance; MOSFETs; Resistance heating; Resonance; Semiconductor devices; Temperature; Thermal resistance;
Journal_Title :
Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on
DOI :
10.1109/TCSI.2002.801279