DocumentCode :
798209
Title :
Microwave plasma grown oxynitride using nitrous oxide
Author :
Mukhopadhyay, M. ; Ray, S.K. ; Maiti, C.K.
Author_Institution :
Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
Volume :
31
Issue :
22
fYear :
1995
fDate :
10/26/1995 12:00:00 AM
Firstpage :
1953
Lastpage :
1954
Abstract :
The microwave N2O plasma oxidation of Si(100) at low temperature (<200°C) is reported. The presence of nitrogen slightly inside the SiO2 layer has been observed by X-ray photoelectron spectroscopy (XPS). Electrical and interfacial properties are also discussed
Keywords :
X-ray photoelectron spectra; elemental semiconductors; nitridation; oxidation; plasma deposition; silicon; 200 C; N2O; Si; Si(100); SiO2; SiON; X-ray photoelectron spectroscopy; electrical properties; interfacial properties; low temperature growth; microwave plasma oxidation; nitrous oxide; oxynitride film;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19951332
Filename :
490683
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=798209
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