DocumentCode
798215
Title
Improvement of Hydrogenated Amorphous-Silicon TFT Performances With Low- 
Siloxane-Based Hydrogen Silsesquioxane (HSQ) Passivation Layer
Author
Chang, Ta-Shan ; Chang, Ting-Chang ; Liu, Po-Tsun ; Chang, Tien-Shan ; Tu, Chun-Hao ; Yeh, Feng-Sheng
Author_Institution
Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu
Volume
27
Issue
11
fYear
2006
Firstpage
902
Lastpage
904
Abstract
A low-dielectric-constant (low-k)-material siloxane-based hydrogen silsesquioxane (HSQ) is investigated as a passivation layer in bottom-gate hydrogenated amorphous-silicon thin-film transistors (a-Si : H TFTs). The low-k HSQ film passivated on TFT promotes the brightness and aperture ratio of TFT liquid-crystal display due to its high light transmittance and good planarization. In addition, the performance of a-Si : H TFT with HSQ passivation has been improved, compared to a conventional silicon nitride (SiNx)-passivated TFT because the hydrogen bonds of HSQ assist the hydrogen incorporation to eliminate the density of states between the back channel and passivation layer. Experimental results exhibit an improved field-effect mobility of 0.57 cm2/Vmiddots and a subthreshold swing of 0.68 V
Keywords
amorphous semiconductors; hydrogenation; low-k dielectric thin films; passivation; silicon; silicon compounds; thin film transistors; 0.68 V; Si:H; SiN; TFT liquid-crystal display; field-effect mobility; hydrogen silsesquioxane; hydrogenated amorphous-silicon TFT; light transmittance; low-k material; passivation layer; planarization; silicon nitride; Apertures; Brightness; Delay effects; Electrodes; Hydrogen; Liquid crystal displays; Passivation; Planarization; Silicon compounds; Thin film transistors; Low-dielectric constant; passivation; thin-film transistor (TFT);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2006.884721
Filename
1715461
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