Title :
Thermal simulation of energetic transients in multilevel metallisation systems
Author :
Gui, X. ; Dew, S.K. ; Brett, M.J.
Author_Institution :
Dept. of Electr. Eng., Alberta Univ., Edmonton, Alta., Canada
fDate :
10/26/1995 12:00:00 AM
Abstract :
Thermal simulation of transients due to high current pulses in multilevel metallisation systems has been performed. Such transients can cause metallisation failure and are of particular concern for field-programmable gate array (FPGA) devices with voltage programmable links (VPLs). To prevent this failure, the maximum pulse width against current density has been determined for a three-level metal system. Comparison with a single-level system is also illustrated
Keywords :
failure analysis; field programmable gate arrays; integrated circuit metallisation; integrated circuit modelling; transient analysis; current pulses; failure; field-programmable gate arrays; multilevel metallisation; thermal simulation; transients; voltage programmable links;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951293
