Title :
Integration of Germanium-on-Insulator and Silicon MOSFETs on a Silicon Substrate
Author :
Feng, Jia ; Liu, Yaocheng ; Griffin, Peter B. ; Plummer, James D.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., CA
Abstract :
The monolithic integration of germanium-on-insulator (GeOI) p-MOSFETs with silicon n-MOSFETs on a silicon substrate is demonstrated. The GeOI p-MOSFETs are fabricated on the oxide for silicon device isolation based on the newly developed rapid-melt-growth method. CMOS inverters consisting of the silicon n-MOSFET and GeOI p-MOSFET were obtained, and the measured results show that the processing of high-performance GeOI devices is compatible with bulk-silicon technology
Keywords :
MOSFET; germanium; isolation technology; semiconductor-insulator boundaries; silicon; CMOS inverters; MOSFET; bulk-silicon technology; germanium-on-insulator; rapid melt growth method; silicon device isolation; Amorphous materials; CMOS process; Germanium; Inverters; MOSFET circuits; Monolithic integrated circuits; Photodetectors; Silicon devices; Silicon on insulator technology; Substrates; Germanium-on-insulator (GeOI); MOSFET; heterogeneous integration; monolithic integration;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.883286
