Title :
Effects of microscopic fluctuations in dopant distributions on MOSFET threshold voltage
Author :
Nishinohara, Kazumi ; Shigyo, Naoyuki ; Wada, Tetsunori
Author_Institution :
Toshiba Corp., Kawasaki, Japan
fDate :
3/1/1992 12:00:00 AM
Abstract :
The effects of fluctuations in dopant distribution on the MOSFET threshold voltage and their dependence on the scaling were investigated using device simulation. The simulation indicates that the microscopic fluctuations in dopant distribution not only induce threshold-voltage value. It was found that the threshold-voltage value deviation is mostly affected by fluctuating dopant distribution at the substrate surface, rather than throughout the depletion layer. Discussion incorporating microscopic fluctuations in surface electric potential, due to fluctuating dopant distribution, explained not only deviations but also the mean value lowering of the threshold voltage in the simulation
Keywords :
impurity distribution; insulated gate field effect transistors; semiconductor doping; MOSFET threshold voltage; device simulation; dopant distributions; microscopic fluctuations; scaling; substrate surface; surface electric potential; Atomic layer deposition; Dielectric substrates; Electric potential; FETs; Fluctuations; MOSFET circuits; Microscopy; Potential energy; Silicon devices; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
