DocumentCode
798368
Title
A Pt/Ga2O3-ZnO/SiC Schottky diode-based hydrocarbon gas sensor
Author
Trinchi, Adrian ; Galatsis, K. ; Wlodarski, W. ; Li, Y.X.
Author_Institution
Sch. of Electr. & Comput. Eng., RMIT Univ., Melbourne, Vic., Australia
Volume
3
Issue
5
fYear
2003
Firstpage
548
Lastpage
553
Abstract
In this paper, a novel metal-reactive insulator-silicon carbide device with a catalytic layer for hydrocarbon gas-sensing is presented. This structure, employed as a Schottky diode, utilizes sol-gel prepared Ga2O3-ZnO layer as the reactive insulator. The sensor has been exposed to propene gas, which lowers the barrier height of the diode. The responses were stable and repeatable at operating temperatures between 300 and 600°C. The response to propene in different ambients was examined. The effect of diode bias has been investigated by analyzing the sensors response to various propene concentrations when held at constant currents of 2 and 8 mA.
Keywords
MIS devices; Schottky diodes; electric sensing devices; gallium compounds; gas sensors; platinum; silicon compounds; sol-gel processing; thermal stability; wide band gap semiconductors; zinc compounds; 2 to 8 mA; 300 to 600 C; Pt-Ga2O3ZnO-SiC; Pt/Ga2O3-ZnO/SiC Schottky diode-based hydrocarbon gas sensor; Schottky diode; catalytic layer; diode barrier height; diode bias; hydrocarbon gas-sensing; metal-reactive insulator-silicon carbide device; operating ambients; operating temperatures; propene concentrations; propene gas; sensor constant currents; sensor response; sol-gel prepared Ga2O3-ZnO layer; stable repeatable responses; Gas detectors; Gas insulation; Hydrocarbons; Metal-insulator structures; Monitoring; Schottky diodes; Semiconductor diodes; Silicon carbide; Temperature sensors; Zinc oxide;
fLanguage
English
Journal_Title
Sensors Journal, IEEE
Publisher
ieee
ISSN
1530-437X
Type
jour
DOI
10.1109/JSEN.2003.817670
Filename
1234890
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