Title :
1.55 mu m DFB laser array with lambda /4-shifted first-order gratings fabricated by X-ray lithography
Author :
Nakao, M. ; Sato, K. ; Nishida, T. ; Tamamura, T. ; Ozawa, A. ; Saito, Y. ; Okada, I. ; Yoshihara, H.
Author_Institution :
NTT Opto-Electron. Labs., Atsugi, Japan
Abstract :
First-order grating patterns ( lambda =0.24 mu m) with lambda /4-shift for GaInAsP/InP DFB laser array were successfully fabricated by X-ray lithography. The 20-DFB laser array operated in the single longitudinal mode and the wavelength varied as designed.<>
Keywords :
III-V semiconductors; X-ray lithography; distributed feedback lasers; gallium arsenide; indium compounds; optical communication equipment; semiconductor junction lasers; 1.55 micron; 240 nm; DFB laser array; GaInAsP-InP lasers; X-ray lithography; first-order gratings; quarter-wave shifted gratings; semiconductors; single longitudinal mode; Distributed feedback lasers; Gallium compounds; Indium compounds; Optical communication equipment; Semiconductor lasers; X-ray lithography;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890107
