Sub-half-micrometer concave MOSFET with double LDD structure

Author

Hieda, Katsuhiko ; Sunouchi, Kazumasa ; Takato, Hiroshi ; Nitayama, Akihiro ; Horiguchi, Fumio ; Masuoka, Fujio

Author_Institution

Toshiba Corp., Kawasaki, Japan

Volume

39

Issue

3

fYear

1992

fDate

3/1/1992 12:00:00 AM

Firstpage

671

Lastpage

676

Abstract

The double lightly doped drain concave (DLC) MOSFET has been developed for sub-half-micrometer MOSFETs which can operate at a 5-V supply voltage. This structure has an impurity profile of n⁺-n^--p^--p along the sidewall of the groove. It is found that the DLC MOSFET has excellent characteristics, such as high drain sustaining voltage, less short-channel effect, high current drivability, and high reliability, due to the double LDD concave structure. The DLC MOSFET is one of the most promising device structures for sub-half-micrometer MOSFETs

Keywords

doping profiles; insulated gate field effect transistors; reliability; 5 V; 5-V supply voltage; concave MOSFET; current drivability; double LDD structure; drain sustaining voltage; impurity profile; lightly doped drain; n⁺-n^--p^--p; reliability; short-channel effect; subhalf-micron devices; Annealing; Doping; Etching; Fabrication; Impurities; MOSFET circuits; Silicon; Thermal resistance; Threshold voltage; Ultra large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.123493

Filename

123493