Title :
High-frequency transport of two-dimensional hot electrons in GaAs and In0.53Ga0.47As quantum wells at low temperatures
Author :
Chattopadhyay, D. ; Basu, P.P.
Author_Institution :
Max-Planck-Inst. fuer Festkoerperforschung, Stuttgart, Germany
fDate :
3/1/1992 12:00:00 AM
Abstract :
Small-signal AC mobility of hot electrons itinerant two dimensionally in GaAs and (In, Ga)As quantum wells at a lattice temperature of 4.2 K is calculated on the basis of a drifted Fermi-Dirac distribution function in the regime where energy loss occurs via deformation potential acoustic scattering and momentum loss predominantly via background impurity scattering for GaAs quantum wells and alloy scattering for (In, Ga)As quantum wells. Results are obtained for different well widths and sheet carrier concentrations. Cutoff frequencies around 15 and 100 GHz are indicated, respectively, for GaAs and (In, Ga)As quantum wells
Keywords :
III-V semiconductors; carrier mobility; gallium arsenide; high-frequency effects; hot carriers; impurity scattering; indium compounds; semiconductor quantum wells; 100 GHz; 15 GHz; 4.2 K; GaAs; HF transport; In0.53Ga0.47As; alloy scattering; background impurity scattering; cutoff frequencies; deformation potential acoustic scattering; drifted Fermi-Dirac distribution function; energy loss; lattice temperature; low temperatures; momentum loss; quantum wells; sheet carrier concentrations; small-signal AC mobility; two-dimensional hot electrons; well widths; Acoustic scattering; Cutoff frequency; Distribution functions; Electron mobility; Energy loss; Gallium arsenide; Impurities; Lattices; Particle scattering; Temperature distribution;
Journal_Title :
Electron Devices, IEEE Transactions on
