Title :
An analytic theory of the impact of velocity overshoot on the drain characteristics of field-effect transistors
Author :
Blakey, Peter A. ; Joardar, Kuntal
Author_Institution :
Motorola Inc., Mesa, AZ, USA
fDate :
3/1/1992 12:00:00 AM
Abstract :
An analytic theory of the impact of velocity overshoot on the drain current characteristics of field-effect transistors is presented. Good agreement between the theory and experimental data is demonstrated for silicon MOS devices. Some applications of the theory are outlined
Keywords :
field effect transistors; semiconductor device models; FET; MOS devices; Si; drain characteristics; field-effect transistors; velocity overshoot; Circuits; Computational modeling; Design automation; Design for experiments; Design optimization; FETs; MOS devices; Numerical simulation; Silicon; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
